| Hersteller | |
| Hersteller-Teilenummer | DOD4185 |
| EBEE-Teilenummer | E841430591 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 40V 45A 73.5W 15mΩ@10V,10A 2.5V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1338 | $ 0.6690 |
| 50+ | $0.1058 | $ 5.2900 |
| 150+ | $0.0918 | $ 13.7700 |
| 500+ | $0.0813 | $ 40.6500 |
| 2500+ | $0.0729 | $ 182.2500 |
| 5000+ | $0.0687 | $ 343.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | DOINGTER DOD4185 | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 15mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 203pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 73.5W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 45A | |
| Ciss-Input Capacitance | 2.063nF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1338 | $ 0.6690 |
| 50+ | $0.1058 | $ 5.2900 |
| 150+ | $0.0918 | $ 13.7700 |
| 500+ | $0.0813 | $ 40.6500 |
| 2500+ | $0.0729 | $ 182.2500 |
| 5000+ | $0.0687 | $ 343.5000 |
