| Hersteller | |
| Hersteller-Teilenummer | DOD4184 |
| EBEE-Teilenummer | E841430588 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 40V 60A 47W 9mΩ@4.5V,20A 2.5V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1109 | $ 0.5545 |
| 50+ | $0.0888 | $ 4.4400 |
| 150+ | $0.0778 | $ 11.6700 |
| 500+ | $0.0695 | $ 34.7500 |
| 2500+ | $0.0629 | $ 157.2500 |
| 5000+ | $0.0595 | $ 297.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | DOINGTER DOD4184 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 6.5mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 160pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 47W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 2.38nF | |
| Output Capacitance(Coss) | 188pF | |
| Gate Charge(Qg) | 35nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1109 | $ 0.5545 |
| 50+ | $0.0888 | $ 4.4400 |
| 150+ | $0.0778 | $ 11.6700 |
| 500+ | $0.0695 | $ 34.7500 |
| 2500+ | $0.0629 | $ 157.2500 |
| 5000+ | $0.0595 | $ 297.5000 |
