| Hersteller | |
| Hersteller-Teilenummer | DOD25N04 |
| EBEE-Teilenummer | E841416025 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 40V 25A 25mΩ@10V,12A 26W 2.5V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0631 | $ 0.6310 |
| 100+ | $0.0503 | $ 5.0300 |
| 300+ | $0.0439 | $ 13.1700 |
| 2500+ | $0.0391 | $ 97.7500 |
| 5000+ | $0.0352 | $ 176.0000 |
| 10000+ | $0.0333 | $ 333.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | DOINGTER DOD25N04 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 25mΩ@10V | |
| Betriebstemperatur - | -50℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 79pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 26W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 25A | |
| Ciss-Input Capacitance | 799pF | |
| Output Capacitance(Coss) | 119pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0631 | $ 0.6310 |
| 100+ | $0.0503 | $ 5.0300 |
| 300+ | $0.0439 | $ 13.1700 |
| 2500+ | $0.0391 | $ 97.7500 |
| 5000+ | $0.0352 | $ 176.0000 |
| 10000+ | $0.0333 | $ 333.0000 |
