| Hersteller | |
| Hersteller-Teilenummer | DC015P2G |
| EBEE-Teilenummer | E841367278 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 40A 14.5mΩ@10V,10A 39W 1.9V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0906 | $ 0.4530 |
| 50+ | $0.0716 | $ 3.5800 |
| 150+ | $0.0622 | $ 9.3300 |
| 500+ | $0.0550 | $ 27.5000 |
| 2500+ | $0.0494 | $ 123.5000 |
| 5000+ | $0.0465 | $ 232.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | DOINGTER DC015P2G | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 14.5mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 144pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 39W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 1.229nF | |
| Gate Charge(Qg) | 26.3nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0906 | $ 0.4530 |
| 50+ | $0.0716 | $ 3.5800 |
| 150+ | $0.0622 | $ 9.3300 |
| 500+ | $0.0550 | $ 27.5000 |
| 2500+ | $0.0494 | $ 123.5000 |
| 5000+ | $0.0465 | $ 232.5000 |
