5% off
| Hersteller | |
| Hersteller-Teilenummer | FTF30P35D |
| EBEE-Teilenummer | E819184459 |
| Gehäuse | PDFN-8(3.3x3.3) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | PDFN(3x3) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.9541 | $ 2.9541 |
| 10+ | $2.6029 | $ 26.0290 |
| 30+ | $2.3829 | $ 71.4870 |
| 100+ | $2.1570 | $ 215.7000 |
| 500+ | $2.0564 | $ 1028.2000 |
| 1000+ | $2.0112 | $ 2011.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ARK micro FTF30P35D | |
| RoHS | ||
| Typ | P-Channel | |
| Konfiguration | - | |
| RDS(on) | 30Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 0.84pF | |
| Number | 2 P-Channel | |
| Pd - Power Dissipation | 16W | |
| Drain to Source Voltage | 350V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 500mA | |
| Ciss-Input Capacitance | 43.39pF | |
| Output Capacitance(Coss) | - | |
| Gate Charge(Qg) | - |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.9541 | $ 2.9541 |
| 10+ | $2.6029 | $ 26.0290 |
| 30+ | $2.3829 | $ 71.4870 |
| 100+ | $2.1570 | $ 215.7000 |
| 500+ | $2.0564 | $ 1028.2000 |
| 1000+ | $2.0112 | $ 2011.2000 |
