5% off
| Hersteller | |
| Hersteller-Teilenummer | DMS8515E |
| EBEE-Teilenummer | E822371817 |
| Gehäuse | SOT-223 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | None |
| Beschreibung | SOT-223 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.8569 | $ 1.8569 |
| 10+ | $1.5724 | $ 15.7240 |
| 30+ | $1.3930 | $ 41.7900 |
| 100+ | $1.2107 | $ 121.0700 |
| 500+ | $1.1276 | $ 563.8000 |
| 1000+ | $1.0911 | $ 1091.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ARK micro DMS8515E | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 30Ω@0V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 4.1pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.5W | |
| Drain to Source Voltage | 850V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 200mA | |
| Ciss-Input Capacitance | 393.4pF | |
| Output Capacitance(Coss) | 20.7pF | |
| Gate Charge(Qg) | 13.6nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.8569 | $ 1.8569 |
| 10+ | $1.5724 | $ 15.7240 |
| 30+ | $1.3930 | $ 41.7900 |
| 100+ | $1.2107 | $ 121.0700 |
| 500+ | $1.1276 | $ 563.8000 |
| 1000+ | $1.0911 | $ 1091.1000 |
