| Hersteller | |
| Hersteller-Teilenummer | AP60N04DF |
| EBEE-Teilenummer | E83011301 |
| Gehäuse | DFN3x3-8L |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 40V 60A 15.5mΩ@10V,20A 34.7W 2.5V@250uA 1 N-channel PDFN-8L(3x3) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.1564 | $ 0.1564 |
| 10+ | $0.1246 | $ 1.2460 |
| 30+ | $0.1110 | $ 3.3300 |
| 100+ | $0.0941 | $ 9.4100 |
| 500+ | $0.0865 | $ 43.2500 |
| 1000+ | $0.0820 | $ 82.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | A Power microelectronics AP60N04DF | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 15.5mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 88pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 34.7W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 1.314nF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.1564 | $ 0.1564 |
| 10+ | $0.1246 | $ 1.2460 |
| 30+ | $0.1110 | $ 3.3300 |
| 100+ | $0.0941 | $ 9.4100 |
| 500+ | $0.0865 | $ 43.2500 |
| 1000+ | $0.0820 | $ 82.0000 |
