| Hersteller | |
| Hersteller-Teilenummer | AP20P04D |
| EBEE-Teilenummer | E83024657 |
| Gehäuse | TO-252-3L |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 40V 20A 31.3W 30mΩ@10V,18A 1V@250uA TO-252-3L MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.1426 | $ 0.1426 |
| 10+ | $0.1096 | $ 1.0960 |
| 30+ | $0.0955 | $ 2.8650 |
| 100+ | $0.0779 | $ 7.7900 |
| 500+ | $0.0701 | $ 35.0500 |
| 1000+ | $0.0654 | $ 65.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | A Power microelectronics AP20P04D | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 40mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 80pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 31.3W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.004nF | |
| Output Capacitance(Coss) | 108pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.1426 | $ 0.1426 |
| 10+ | $0.1096 | $ 1.0960 |
| 30+ | $0.0955 | $ 2.8650 |
| 100+ | $0.0779 | $ 7.7900 |
| 500+ | $0.0701 | $ 35.0500 |
| 1000+ | $0.0654 | $ 65.4000 |
