Silicon Carbide Field Effect Transistor (MOSFET)

The Results of Silicon Carbide Field Effect Transistor (MOSFET)3

Manufacturer

  • KNSCHA

Package

  • TO-247-3
  • TO-247-4

Gain Bandwidth Product(GBP)

  • -55℃~+150℃

Trip Current

  • 62W

Drain Source On-State Resistance

  • 23nC

Gate Threshold Voltageu200b

  • 7A
  • 58A
  • 38A

Input Capacitance

  • 1.8pF

Output Capacitance

  • 194pF

Segment Drive Current

  • -

Supply Voltage (VCCB)

  • 1 N-Channel

Drain-Source On-State Resistance(18V)

  • -

Drain-Source On-State Resistance(20V)

  • -

Vgs(th)

  • 650mΩ

V(BR)DSS

  • Single Tube

Drain Source Voltage

  • -

Drain Source Threshold Voltage

  • 1200V
  • 1700V

With Lamp

  • 2.6V
Results:3
  • 1
Images
Pricing
Quantity
Availability
Mfr.Part #
eBee Part#
Manufacturer
Product Name
Description
RoHS
Package
Packaging
Images
Pricing
Quantity
Availability
Mfr.Part #
eBee Part#
Manufacturer
Product Name
Description
RoHS
Package
Packaging
1+
$3.0023
10+
$2.5573
30+
$2.2782
120+
$1.9930
Min: 1
Mult: 1
27
In Stock
KN3M65017DE87432998KNSCHAKNSCHA KN3M65017D
-
-
TO-247-3Tube-packed
1+
$10.3255
10+
$8.9330
30+
$8.0851
120+
$7.3730
Min: 1
Mult: 1
34
In Stock
KN3M50120KE85373189KNSCHAKNSCHA KN3M50120K
-
-
TO-247-4Tube-packed
1+
$6.0152
10+
$5.2035
30+
$4.7102
120+
$4.2953
Min: 1
Mult: 1
8
In Stock
KN3M80120KE85373190KNSCHAKNSCHA KN3M80120K
-
-
TO-247-4Tube-packed
  • 1