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| Fabricante | |
| Código de Pieza del Fabricante | SGT50T65FD1PN |
| Código de Pieza EBEE | E82761787 |
| Paquete | TO-3P-3 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | TO-3P-3 IGBT Transistors / Modules ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.2575 | $ 1.2575 |
| 10+ | $1.0638 | $ 10.6380 |
| 30+ | $0.8526 | $ 25.5780 |
| 90+ | $0.7320 | $ 65.8800 |
| 510+ | $0.6796 | $ 346.5960 |
| 1200+ | $0.6542 | $ 785.0400 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,IGBTs ,Single IGBTs | |
| Hoja de Datos | Hangzhou Silan Microelectronics SGT50T65FD1PN | |
| RoHS | ||
| Temperatura de funcionamiento | -55℃~+150℃ | |
| Colector-Emiter Breakdown Voltage (Vces) | 650V | |
| Gate-Emitter Threshold Voltage (Vge (Vge (th) .Ic) | 5V | |
| Pd - Power Dissipation | 235W | |
| IGBT Type | FS (Field Stop) | |
| Gate Charge(Qg) | 46nC@15V | |
| Td(off) | 130ns | |
| Td(on) | 45ns | |
| Reverse Transfer Capacitance (Cres) | 42pF | |
| Reverse Recovery Time(trr) | 33ns | |
| Switching Energy(Eoff) | 3.8mJ | |
| Turn-On Energy (Eon) | 1mJ | |
| Input Capacitance(Cies) | 4.5nF | |
| Pulsed Current- Forward(Ifm) | - | |
| Output Capacitance(Coes) | 100pF |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.2575 | $ 1.2575 |
| 10+ | $1.0638 | $ 10.6380 |
| 30+ | $0.8526 | $ 25.5780 |
| 90+ | $0.7320 | $ 65.8800 |
| 510+ | $0.6796 | $ 346.5960 |
| 1200+ | $0.6542 | $ 785.0400 |
