| Hersteller | |
| Hersteller-Teilenummer | SI2301 |
| EBEE-Teilenummer | E82891731 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 20V 2.2A 700mW 120mΩ@4.5V,1.5A 1.5V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0137 | $ 0.6850 |
| 500+ | $0.0108 | $ 5.4000 |
| 3000+ | $0.0081 | $ 24.3000 |
| 6000+ | $0.0071 | $ 42.6000 |
| 24000+ | $0.0067 | $ 160.8000 |
| 51000+ | $0.0065 | $ 331.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistors/Thyristors ,MOSFETs | |
| Datenblatt | YONGYUTAI SI2301 | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 120mΩ@4.5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 700mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 2.2A | |
| Ciss-Input Capacitance | 200pF | |
| Output Capacitance(Coss) | 80pF | |
| Gate Charge(Qg) | - |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0137 | $ 0.6850 |
| 500+ | $0.0108 | $ 5.4000 |
| 3000+ | $0.0081 | $ 24.3000 |
| 6000+ | $0.0071 | $ 42.6000 |
| 24000+ | $0.0067 | $ 160.8000 |
| 51000+ | $0.0065 | $ 331.5000 |
