5% off
| Hersteller | |
| Hersteller-Teilenummer | 2N7002EY |
| EBEE-Teilenummer | E819194445 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0168 | $ 0.8400 |
| 500+ | $0.0132 | $ 6.6000 |
| 3000+ | $0.0112 | $ 33.6000 |
| 6000+ | $0.0101 | $ 60.6000 |
| 24000+ | $0.0090 | $ 216.0000 |
| 51000+ | $0.0085 | $ 433.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | AnBon 2N7002EY | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 2.5Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 300mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 300mA | |
| Ciss-Input Capacitance | 21pF | |
| Output Capacitance(Coss) | 9pF | |
| Gate Charge(Qg) | 1.22nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0168 | $ 0.8400 |
| 500+ | $0.0132 | $ 6.6000 |
| 3000+ | $0.0112 | $ 33.6000 |
| 6000+ | $0.0101 | $ 60.6000 |
| 24000+ | $0.0090 | $ 216.0000 |
| 51000+ | $0.0085 | $ 433.5000 |
