20% off
| Hersteller | |
| Hersteller-Teilenummer | YFW2301B |
| EBEE-Teilenummer | E85444195 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 20V 2.3A 135mΩ@4.5V,2A 700mW 500mV@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0270 | $ 0.5400 |
| 200+ | $0.0212 | $ 4.2400 |
| 600+ | $0.0180 | $ 10.8000 |
| 3000+ | $0.0161 | $ 48.3000 |
| 9000+ | $0.0143 | $ 128.7000 |
| 21000+ | $0.0134 | $ 281.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | YFW YFW2301B | |
| RoHS | ||
| Typ | P-Channel | |
| Konfiguration | - | |
| RDS(on) | 135mΩ@4.5V;150mΩ@2.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 34pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 700mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Current - Continuous Drain(Id) | 2.3A | |
| Ciss-Input Capacitance | 290pF | |
| Output Capacitance(Coss) | 60pF | |
| Gate Charge(Qg) | 3nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0270 | $ 0.5400 |
| 200+ | $0.0212 | $ 4.2400 |
| 600+ | $0.0180 | $ 10.8000 |
| 3000+ | $0.0161 | $ 48.3000 |
| 9000+ | $0.0143 | $ 128.7000 |
| 21000+ | $0.0134 | $ 281.4000 |
