| Hersteller | |
| Hersteller-Teilenummer | CS8N60FA9H |
| EBEE-Teilenummer | E8140753 |
| Gehäuse | TO-220F |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 600V 8A 45W 1.2Ω@10V,4A 4V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5402 | $ 0.5402 |
| 10+ | $0.4361 | $ 4.3610 |
| 50+ | $0.3848 | $ 19.2400 |
| 100+ | $0.3335 | $ 33.3500 |
| 500+ | $0.3033 | $ 151.6500 |
| 1000+ | $0.2867 | $ 286.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Wuxi China Resources Huajing Microelectronics CS8N60FA9H | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 1.2Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 15pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 45W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 1.253nF | |
| Output Capacitance(Coss) | 115pF | |
| Gate Charge(Qg) | 29nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5402 | $ 0.5402 |
| 10+ | $0.4361 | $ 4.3610 |
| 50+ | $0.3848 | $ 19.2400 |
| 100+ | $0.3335 | $ 33.3500 |
| 500+ | $0.3033 | $ 151.6500 |
| 1000+ | $0.2867 | $ 286.7000 |
