| Hersteller | |
| Hersteller-Teilenummer | CS4N60A4R |
| EBEE-Teilenummer | E8442414 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 600V 4A 2.5Ω@10V,2A 75W 4V@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3000 | $ 1.5000 |
| 50+ | $0.2377 | $ 11.8850 |
| 150+ | $0.2109 | $ 31.6350 |
| 500+ | $0.1776 | $ 88.8000 |
| 2500+ | $0.1627 | $ 406.7500 |
| 5000+ | $0.1538 | $ 769.0000 |
| 10000+ | $0.1520 | $ 1520.0000 |
| 20000+ | $0.1507 | $ 3014.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Wuxi China Resources Huajing Microelectronics CS4N60A4R | |
| RoHS | ||
| RDS(on) | 2.5Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 75W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 590pF | |
| Gate Charge(Qg) | 14.5nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3000 | $ 1.5000 |
| 50+ | $0.2377 | $ 11.8850 |
| 150+ | $0.2109 | $ 31.6350 |
| 500+ | $0.1776 | $ 88.8000 |
| 2500+ | $0.1627 | $ 406.7500 |
| 5000+ | $0.1538 | $ 769.0000 |
| 10000+ | $0.1520 | $ 1520.0000 |
| 20000+ | $0.1507 | $ 3014.0000 |
