| Hersteller | |
| Hersteller-Teilenummer | CS1N60A4H |
| EBEE-Teilenummer | E8162383 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 600V 800mA 25W 15Ω@10V,400mA 4V@250uA 1 N-channel TO-252-2(DPAK) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1615 | $ 0.8075 |
| 50+ | $0.1280 | $ 6.4000 |
| 150+ | $0.1136 | $ 17.0400 |
| 500+ | $0.0956 | $ 47.8000 |
| 2500+ | $0.0876 | $ 219.0000 |
| 5000+ | $0.0828 | $ 414.0000 |
| 10000+ | $0.0818 | $ 818.0000 |
| 20000+ | $0.0812 | $ 1624.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Wuxi China Resources Huajing Microelectronics CS1N60A4H | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 15Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 2.6pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 25W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 800mA | |
| Ciss-Input Capacitance | 10.7pF | |
| Output Capacitance(Coss) | 10.7pF | |
| Gate Charge(Qg) | 4nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1615 | $ 0.8075 |
| 50+ | $0.1280 | $ 6.4000 |
| 150+ | $0.1136 | $ 17.0400 |
| 500+ | $0.0956 | $ 47.8000 |
| 2500+ | $0.0876 | $ 219.0000 |
| 5000+ | $0.0828 | $ 414.0000 |
| 10000+ | $0.0818 | $ 818.0000 |
| 20000+ | $0.0812 | $ 1624.0000 |
