| Hersteller | |
| Hersteller-Teilenummer | CS12N06AE-G |
| EBEE-Teilenummer | E8442412 |
| Gehäuse | SOP-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 60V 12A 3.2W 13.5mΩ@10V,12A 1.9V@250uA 1 N-Channel SOP-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3116 | $ 0.3116 |
| 10+ | $0.2468 | $ 2.4680 |
| 30+ | $0.2191 | $ 6.5730 |
| 100+ | $0.1844 | $ 18.4400 |
| 500+ | $0.1690 | $ 84.5000 |
| 1000+ | $0.1598 | $ 159.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Wuxi China Resources Huajing Microelectronics CS12N06AE-G | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 10.5mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 123pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 3.2W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 2.37nF | |
| Output Capacitance(Coss) | 164pF | |
| Gate Charge(Qg) | 50.7nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3116 | $ 0.3116 |
| 10+ | $0.2468 | $ 2.4680 |
| 30+ | $0.2191 | $ 6.5730 |
| 100+ | $0.1844 | $ 18.4400 |
| 500+ | $0.1690 | $ 84.5000 |
| 1000+ | $0.1598 | $ 159.8000 |
