| Hersteller | |
| Hersteller-Teilenummer | CS100N03B4 |
| EBEE-Teilenummer | E8162364 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 100A 100W 5.3mΩ@10V,50A 3V@250uA 1 N-channel TO-252-2(DPAK) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3000 | $ 0.3000 |
| 10+ | $0.2377 | $ 2.3770 |
| 30+ | $0.2109 | $ 6.3270 |
| 100+ | $0.1776 | $ 17.7600 |
| 500+ | $0.1627 | $ 81.3500 |
| 1000+ | $0.1538 | $ 153.8000 |
| 2500+ | $0.1520 | $ 380.0000 |
| 5000+ | $0.1507 | $ 753.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Wuxi China Resources Huajing Microelectronics CS100N03B4 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 8mΩ@5V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 300pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 100W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 3.5nF | |
| Output Capacitance(Coss) | 350pF | |
| Gate Charge(Qg) | 68nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3000 | $ 0.3000 |
| 10+ | $0.2377 | $ 2.3770 |
| 30+ | $0.2109 | $ 6.3270 |
| 100+ | $0.1776 | $ 17.7600 |
| 500+ | $0.1627 | $ 81.3500 |
| 1000+ | $0.1538 | $ 153.8000 |
| 2500+ | $0.1520 | $ 380.0000 |
| 5000+ | $0.1507 | $ 753.5000 |
