| Hersteller | |
| Hersteller-Teilenummer | WPM2080-3/TR |
| EBEE-Teilenummer | E82939852 |
| Gehäuse | SOT-23-3L |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | SOT-23-3L MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0651 | $ 0.6510 |
| 100+ | $0.0521 | $ 5.2100 |
| 300+ | $0.0456 | $ 13.6800 |
| 3000+ | $0.0408 | $ 122.4000 |
| 6000+ | $0.0369 | $ 221.4000 |
| 9000+ | $0.0349 | $ 314.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | WILLSEMI(Will Semicon) WPM2080-3/TR | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 81mΩ@1.8V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 124pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 1.062nF | |
| Output Capacitance(Coss) | 146pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0651 | $ 0.6510 |
| 100+ | $0.0521 | $ 5.2100 |
| 300+ | $0.0456 | $ 13.6800 |
| 3000+ | $0.0408 | $ 122.4000 |
| 6000+ | $0.0369 | $ 221.4000 |
| 9000+ | $0.0349 | $ 314.1000 |
