| Hersteller | |
| Hersteller-Teilenummer | WNM4009-3/TR |
| EBEE-Teilenummer | E82931329 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1098 | $ 0.5490 |
| 50+ | $0.0965 | $ 4.8250 |
| 150+ | $0.0908 | $ 13.6200 |
| 500+ | $0.0837 | $ 41.8500 |
| 3000+ | $0.0805 | $ 241.5000 |
| 6000+ | $0.0786 | $ 471.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | WILLSEMI(Will Semicon) WNM4009-3/TR | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 310mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 14pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.15W | |
| Drain to Source Voltage | 110V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 1.45A | |
| Ciss-Input Capacitance | 317pF | |
| Output Capacitance(Coss) | 28pF | |
| Gate Charge(Qg) | 7.5nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1098 | $ 0.5490 |
| 50+ | $0.0965 | $ 4.8250 |
| 150+ | $0.0908 | $ 13.6200 |
| 500+ | $0.0837 | $ 41.8500 |
| 3000+ | $0.0805 | $ 241.5000 |
| 6000+ | $0.0786 | $ 471.6000 |
