| Hersteller | |
| Hersteller-Teilenummer | WNM2030A-3/TR |
| EBEE-Teilenummer | E82931325 |
| Gehäuse | SOT-723 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | SOT-723 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0366 | $ 0.7320 |
| 200+ | $0.0303 | $ 6.0600 |
| 600+ | $0.0269 | $ 16.1400 |
| 2000+ | $0.0248 | $ 49.6000 |
| 8000+ | $0.0223 | $ 178.4000 |
| 16000+ | $0.0213 | $ 340.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | WILLSEMI(Will Semicon) WNM2030A-3/TR | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 1.4Ω@1.8V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 690mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 900mA | |
| Ciss-Input Capacitance | 29pF | |
| Output Capacitance(Coss) | 11pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0366 | $ 0.7320 |
| 200+ | $0.0303 | $ 6.0600 |
| 600+ | $0.0269 | $ 16.1400 |
| 2000+ | $0.0248 | $ 49.6000 |
| 8000+ | $0.0223 | $ 178.4000 |
| 16000+ | $0.0213 | $ 340.8000 |
