| Hersteller | |
| Hersteller-Teilenummer | SIRA60DP-T1-GE3 |
| EBEE-Teilenummer | E8467954 |
| Gehäuse | PowerPAK-SO-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 56A 5W 0.00094Ω@10V,100A 1.1V@250uA 1 N-Channel PowerPAK-SO-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9193 | $ 0.9193 |
| 10+ | $0.7621 | $ 7.6210 |
| 30+ | $0.6843 | $ 20.5290 |
| 100+ | $0.6065 | $ 60.6500 |
| 500+ | $0.5065 | $ 253.2500 |
| 1000+ | $0.4811 | $ 481.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Vishay Intertech SIRA60DP-T1-GE3 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 0.94mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 191pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 5W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Current - Continuous Drain(Id) | 56A | |
| Ciss-Input Capacitance | 7.65nF | |
| Output Capacitance(Coss) | 2.32nF | |
| Gate Charge(Qg) | 38nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9193 | $ 0.9193 |
| 10+ | $0.7621 | $ 7.6210 |
| 30+ | $0.6843 | $ 20.5290 |
| 100+ | $0.6065 | $ 60.6500 |
| 500+ | $0.5065 | $ 253.2500 |
| 1000+ | $0.4811 | $ 481.1000 |
