| Hersteller | |
| Hersteller-Teilenummer | SI2371EDS-T1-GE3 |
| EBEE-Teilenummer | E8467897 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 4.8A 0.045Ω@10V,4.8A 1.1W 1.5V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1517 | $ 0.7585 |
| 50+ | $0.1214 | $ 6.0700 |
| 150+ | $0.1062 | $ 15.9300 |
| 500+ | $0.0948 | $ 47.4000 |
| 3000+ | $0.0857 | $ 257.1000 |
| 6000+ | $0.0811 | $ 486.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Vishay Intertech SI2371EDS-T1-GE3 | |
| RoHS | ||
| RDS(on) | 45mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.1W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 4.8A | |
| Gate Charge(Qg) | 10.6nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1517 | $ 0.7585 |
| 50+ | $0.1214 | $ 6.0700 |
| 150+ | $0.1062 | $ 15.9300 |
| 500+ | $0.0948 | $ 47.4000 |
| 3000+ | $0.0857 | $ 257.1000 |
| 6000+ | $0.0811 | $ 486.6000 |
