| Hersteller | |
| Hersteller-Teilenummer | SI2305CDS-T1-GE3 |
| EBEE-Teilenummer | E837577 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 8V 4.4A 1.1W 0.065Ω@1.8V,2A 1V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1022 | $ 0.5110 |
| 50+ | $0.0847 | $ 4.2350 |
| 150+ | $0.0759 | $ 11.3850 |
| 500+ | $0.0694 | $ 34.7000 |
| 3000+ | $0.0625 | $ 187.5000 |
| 6000+ | $0.0599 | $ 359.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Vishay Intertech SI2305CDS-T1-GE3 | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 65mΩ@1.8V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 300pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.7W | |
| Drain to Source Voltage | 8V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Ciss-Input Capacitance | 96pF | |
| Output Capacitance(Coss) | 330pF | |
| Gate Charge(Qg) | 30nC@8V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1022 | $ 0.5110 |
| 50+ | $0.0847 | $ 4.2350 |
| 150+ | $0.0759 | $ 11.3850 |
| 500+ | $0.0694 | $ 34.7000 |
| 3000+ | $0.0625 | $ 187.5000 |
| 6000+ | $0.0599 | $ 359.4000 |
