15% off
| Hersteller | |
| Hersteller-Teilenummer | VBA1203M |
| EBEE-Teilenummer | E8480924 |
| Gehäuse | SO-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 200V 3A 260mΩ@10V,3A 4V@250uA 1 N-Channel SO-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4017 | $ 0.4017 |
| 10+ | $0.3534 | $ 3.5340 |
| 30+ | $0.3332 | $ 9.9960 |
| 100+ | $0.3083 | $ 30.8300 |
| 500+ | $0.2958 | $ 147.9000 |
| 1000+ | $0.2896 | $ 289.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | VBsemi Elec VBA1203M | |
| RoHS | ||
| RDS(on) | 260mΩ@10V | |
| Number | 1 N-Channel | |
| Pd - Power Dissipation | 96W | |
| Drain to Source Voltage | 200V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4017 | $ 0.4017 |
| 10+ | $0.3534 | $ 3.5340 |
| 30+ | $0.3332 | $ 9.9960 |
| 100+ | $0.3083 | $ 30.8300 |
| 500+ | $0.2958 | $ 147.9000 |
| 1000+ | $0.2896 | $ 289.6000 |
