| Hersteller | |
| Hersteller-Teilenummer | SI2319A |
| EBEE-Teilenummer | E8545576 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 40V 4.4A 95mΩ@4.5V,3.5A 1.25W 1V@250uA 1 Piece P-Channel SOT-23-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0466 | $ 0.4660 |
| 100+ | $0.0369 | $ 3.6900 |
| 300+ | $0.0320 | $ 9.6000 |
| 3000+ | $0.0251 | $ 75.3000 |
| 6000+ | $0.0221 | $ 132.6000 |
| 9000+ | $0.0207 | $ 186.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | UMW(Youtai Semiconductor Co., Ltd.) SI2319A | |
| RoHS | ||
| RDS(on) | 70mΩ@10V;95mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 65pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.25W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 4.4A | |
| Ciss-Input Capacitance | 470pF | |
| Output Capacitance(Coss) | 85pF | |
| Gate Charge(Qg) | 11.5nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0466 | $ 0.4660 |
| 100+ | $0.0369 | $ 3.6900 |
| 300+ | $0.0320 | $ 9.6000 |
| 3000+ | $0.0251 | $ 75.3000 |
| 6000+ | $0.0221 | $ 132.6000 |
| 9000+ | $0.0207 | $ 186.3000 |
