| Hersteller | |
| Hersteller-Teilenummer | SI2308A |
| EBEE-Teilenummer | E8347491 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 3A 1.25W 80mΩ@10V,3A 3V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0377 | $ 0.7540 |
| 200+ | $0.0282 | $ 5.6400 |
| 600+ | $0.0240 | $ 14.4000 |
| 3000+ | $0.0209 | $ 62.7000 |
| 9000+ | $0.0196 | $ 176.4000 |
| 21000+ | $0.0187 | $ 392.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | UMW(Youtai Semiconductor Co., Ltd.) SI2308A | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 80mΩ@10V;95mΩ@4.5V | |
| Betriebstemperatur - | -40℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 15pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.25W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 240pF | |
| Output Capacitance(Coss) | 50pF | |
| Gate Charge(Qg) | 4.8nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0377 | $ 0.7540 |
| 200+ | $0.0282 | $ 5.6400 |
| 600+ | $0.0240 | $ 14.4000 |
| 3000+ | $0.0209 | $ 62.7000 |
| 9000+ | $0.0196 | $ 176.4000 |
| 21000+ | $0.0187 | $ 392.7000 |
