| Hersteller | |
| Hersteller-Teilenummer | TK2P90E,RQ(S |
| EBEE-Teilenummer | E82960440 |
| Gehäuse | DPAK |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 900V 72W 4.7Ω@10V,1.0A 1 N-Channel DPAK MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3376 | $ 0.3376 |
| 10+ | $0.2882 | $ 2.8820 |
| 30+ | $0.2675 | $ 8.0250 |
| 100+ | $0.2420 | $ 24.2000 |
| 500+ | $0.2261 | $ 113.0500 |
| 1000+ | $0.2182 | $ 218.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | TOSHIBA TK2P90E,RQ(S | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 5.9Ω@10V | |
| Reverse Transfer Capacitance (Crss-Vds) | 4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 80W | |
| Drain to Source Voltage | 900V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 500pF | |
| Output Capacitance(Coss) | 40pF | |
| Gate Charge(Qg) | 12nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3376 | $ 0.3376 |
| 10+ | $0.2882 | $ 2.8820 |
| 30+ | $0.2675 | $ 8.0250 |
| 100+ | $0.2420 | $ 24.2000 |
| 500+ | $0.2261 | $ 113.0500 |
| 1000+ | $0.2182 | $ 218.2000 |
