| Hersteller | |
| Hersteller-Teilenummer | SSM6L09FU(TE85L,F) |
| EBEE-Teilenummer | E87421332 |
| Gehäuse | SOT-363 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 200mA 2.7Ω@10V,100mA 300mW [email protected] 1 N-Channel + 1 P-Channel SOT-363 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1373 | $ 0.6865 |
| 50+ | $0.1188 | $ 5.9400 |
| 150+ | $0.1108 | $ 16.6200 |
| 500+ | $0.1009 | $ 50.4500 |
| 3000+ | $0.0965 | $ 289.5000 |
| 6000+ | $0.0938 | $ 562.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | TOSHIBA SSM6L09FU(TE85L,F) | |
| RoHS | ||
| Temperatur | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 5pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Pd - Power Dissipation | 300mW | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Current - Continuous Drain(Id) | 400mA;200mA |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1373 | $ 0.6865 |
| 50+ | $0.1188 | $ 5.9400 |
| 150+ | $0.1108 | $ 16.6200 |
| 500+ | $0.1009 | $ 50.4500 |
| 3000+ | $0.0965 | $ 289.5000 |
| 6000+ | $0.0938 | $ 562.8000 |
