| Hersteller | |
| Hersteller-Teilenummer | CSD18543Q3A |
| EBEE-Teilenummer | E8840100 |
| Gehäuse | VSONP-8(3.3x3.3) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | VSONP-8(3.3x3.3) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6250 | $ 0.6250 |
| 10+ | $0.5109 | $ 5.1090 |
| 30+ | $0.4531 | $ 13.5930 |
| 100+ | $0.3969 | $ 39.6900 |
| 500+ | $0.3631 | $ 181.5500 |
| 1000+ | $0.3454 | $ 345.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Texas Instruments CSD18543Q3A | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 8.1mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 4.8pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 66W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 885pF | |
| Output Capacitance(Coss) | 168pF | |
| Gate Charge(Qg) | 11.1nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6250 | $ 0.6250 |
| 10+ | $0.5109 | $ 5.1090 |
| 30+ | $0.4531 | $ 13.5930 |
| 100+ | $0.3969 | $ 39.6900 |
| 500+ | $0.3631 | $ 181.5500 |
| 1000+ | $0.3454 | $ 345.4000 |
