| Hersteller | |
| Hersteller-Teilenummer | CSD18537NQ5A |
| EBEE-Teilenummer | E872266 |
| Gehäuse | SON-8(5x6) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 50A 3.2W 10mΩ@10V,12A 3V@250uA 1 N-channel SON-8(5x6) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8144 | $ 0.8144 |
| 10+ | $0.6715 | $ 6.7150 |
| 30+ | $0.6008 | $ 18.0240 |
| 100+ | $0.5301 | $ 53.0100 |
| 500+ | $0.4032 | $ 201.6000 |
| 1000+ | $0.3807 | $ 380.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Texas Instruments CSD18537NQ5A | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 10mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 5.2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 3.2W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 1.48nF | |
| Output Capacitance(Coss) | 177pF | |
| Gate Charge(Qg) | 14nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8144 | $ 0.8144 |
| 10+ | $0.6715 | $ 6.7150 |
| 30+ | $0.6008 | $ 18.0240 |
| 100+ | $0.5301 | $ 53.0100 |
| 500+ | $0.4032 | $ 201.6000 |
| 1000+ | $0.3807 | $ 380.7000 |
