| Hersteller | |
| Hersteller-Teilenummer | SI2305CDS |
| EBEE-Teilenummer | E85182095 |
| Gehäuse | SOT-23-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 20V 6A 20mΩ@4.5V,6A 1.8W 1V@250uA SOT-23-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0934 | $ 0.4670 |
| 50+ | $0.0830 | $ 4.1500 |
| 150+ | $0.0777 | $ 11.6550 |
| 500+ | $0.0738 | $ 36.9000 |
| 3000+ | $0.0622 | $ 186.6000 |
| 6000+ | $0.0606 | $ 363.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | TECH PUBLIC SI2305CDS | |
| RoHS | ||
| RDS(on) | 20mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 210pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.8W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 550mV | |
| Current - Continuous Drain(Id) | 6A | |
| Ciss-Input Capacitance | 1.73nF | |
| Output Capacitance(Coss) | 320pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0934 | $ 0.4670 |
| 50+ | $0.0830 | $ 4.1500 |
| 150+ | $0.0777 | $ 11.6550 |
| 500+ | $0.0738 | $ 36.9000 |
| 3000+ | $0.0622 | $ 186.6000 |
| 6000+ | $0.0606 | $ 363.6000 |
