| Hersteller | |
| Hersteller-Teilenummer | FDN5618P |
| EBEE-Teilenummer | E83021110 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 1.6A 1.5W 200mΩ@10V 1.4V@250uA SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0954 | $ 0.4770 |
| 50+ | $0.0762 | $ 3.8100 |
| 150+ | $0.0665 | $ 9.9750 |
| 500+ | $0.0593 | $ 29.6500 |
| 3000+ | $0.0520 | $ 156.0000 |
| 6000+ | $0.0491 | $ 294.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | TECH PUBLIC FDN5618P | |
| RoHS | ||
| RDS(on) | 240mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 17.9pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.5W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Current - Continuous Drain(Id) | 1.6A | |
| Ciss-Input Capacitance | 444.2pF | |
| Gate Charge(Qg) | 11.3nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0954 | $ 0.4770 |
| 50+ | $0.0762 | $ 3.8100 |
| 150+ | $0.0665 | $ 9.9750 |
| 500+ | $0.0593 | $ 29.6500 |
| 3000+ | $0.0520 | $ 156.0000 |
| 6000+ | $0.0491 | $ 294.6000 |
