| Hersteller | |
| Hersteller-Teilenummer | STN1NK80Z |
| EBEE-Teilenummer | E8118277 |
| Gehäuse | SOT-223 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 800V 250mA 2.5W 13Ω@10V,0.5A 4.5V@50uA 1 N-Channel SOT-223-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3107 | $ 1.5535 |
| 50+ | $0.2460 | $ 12.3000 |
| 150+ | $0.2183 | $ 32.7450 |
| 500+ | $0.1837 | $ 91.8500 |
| 2500+ | $0.1683 | $ 420.7500 |
| 4000+ | $0.1591 | $ 636.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | STMicroelectronics STN1NK80Z | |
| RoHS | ||
| Typ | - | |
| RDS(on) | 16Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | - | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 2.5W | |
| Drain to Source Voltage | 800V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 250mA | |
| Ciss-Input Capacitance | - | |
| Output Capacitance(Coss) | - | |
| Gate Charge(Qg) | 7.7nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3107 | $ 1.5535 |
| 50+ | $0.2460 | $ 12.3000 |
| 150+ | $0.2183 | $ 32.7450 |
| 500+ | $0.1837 | $ 91.8500 |
| 2500+ | $0.1683 | $ 420.7500 |
| 4000+ | $0.1591 | $ 636.4000 |
