| Hersteller | |
| Hersteller-Teilenummer | STF24N65M2 |
| EBEE-Teilenummer | E82970244 |
| Gehäuse | TO-220FPAB-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 650V 16A 30W 0.185Ω@10V,8A 3V@250uA 1 N-Channel TO-220FPAB-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.2979 | $ 1.2979 |
| 10+ | $1.0650 | $ 10.6500 |
| 30+ | $0.9365 | $ 28.0950 |
| 100+ | $0.7919 | $ 79.1900 |
| 500+ | $0.7277 | $ 363.8500 |
| 1000+ | $0.6988 | $ 698.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | STMicroelectronics STF24N65M2 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 230mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 1.65pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 30W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 16A | |
| Ciss-Input Capacitance | 1.06nF | |
| Output Capacitance(Coss) | 47.5pF | |
| Gate Charge(Qg) | 29nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.2979 | $ 1.2979 |
| 10+ | $1.0650 | $ 10.6500 |
| 30+ | $0.9365 | $ 28.0950 |
| 100+ | $0.7919 | $ 79.1900 |
| 500+ | $0.7277 | $ 363.8500 |
| 1000+ | $0.6988 | $ 698.8000 |
