| Hersteller | |
| Hersteller-Teilenummer | SED8830A |
| EBEE-Teilenummer | E8393124 |
| Gehäuse | DFNWB-6L(2x5) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 20V 7A 14.5mΩ@4.5V,5A 1.5W 1.3V@250uA 2 N-Channel DFNWB-6L(2x5) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0623 | $ 0.6230 |
| 100+ | $0.0492 | $ 4.9200 |
| 300+ | $0.0427 | $ 12.8100 |
| 2500+ | $0.0378 | $ 94.5000 |
| 5000+ | $0.0339 | $ 169.5000 |
| 10000+ | $0.0320 | $ 320.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | SINO-IC SED8830A | |
| RoHS | ||
| Typ | N-Channel | |
| Konfiguration | Common Drain | |
| RDS(on) | 22mΩ@2.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 13pF | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 1.5W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 69pF | |
| Output Capacitance(Coss) | 18pF | |
| Gate Charge(Qg) | 11nC@4V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0623 | $ 0.6230 |
| 100+ | $0.0492 | $ 4.9200 |
| 300+ | $0.0427 | $ 12.8100 |
| 2500+ | $0.0378 | $ 94.5000 |
| 5000+ | $0.0339 | $ 169.5000 |
| 10000+ | $0.0320 | $ 320.0000 |
