| Hersteller | |
| Hersteller-Teilenummer | SED10070GG |
| EBEE-Teilenummer | E8396083 |
| Gehäuse | DFN-8(5x6) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| Beschreibung | 100V 70A 9.8mΩ@10V,39A 170W 4V@250uA 1 N-Channel DFN-8(5.7x5.1) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5025 | $ 0.5025 |
| 10+ | $0.3908 | $ 3.9080 |
| 30+ | $0.3430 | $ 10.2900 |
| 100+ | $0.2824 | $ 28.2400 |
| 500+ | $0.2521 | $ 126.0500 |
| 1000+ | $0.2361 | $ 236.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | SINO-IC SED10070GG | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 9.8mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 240pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 170W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 70A | |
| Ciss-Input Capacitance | 4.4nF | |
| Output Capacitance(Coss) | 320pF | |
| Gate Charge(Qg) | 96nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5025 | $ 0.5025 |
| 10+ | $0.3908 | $ 3.9080 |
| 30+ | $0.3430 | $ 10.2900 |
| 100+ | $0.2824 | $ 28.2400 |
| 500+ | $0.2521 | $ 126.0500 |
| 1000+ | $0.2361 | $ 236.1000 |
