| Hersteller | |
| Hersteller-Teilenummer | SE40P20B |
| EBEE-Teilenummer | E8396091 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 40V 20A 26mΩ@10V,5A 80W 1.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1800 | $ 0.9000 |
| 50+ | $0.1411 | $ 7.0550 |
| 150+ | $0.1244 | $ 18.6600 |
| 500+ | $0.1037 | $ 51.8500 |
| 2500+ | $0.0940 | $ 235.0000 |
| 5000+ | $0.0884 | $ 442.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | SINO-IC SE40P20B | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 32mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 310pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 80W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 2.96nF | |
| Gate Charge(Qg) | 72nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1800 | $ 0.9000 |
| 50+ | $0.1411 | $ 7.0550 |
| 150+ | $0.1244 | $ 18.6600 |
| 500+ | $0.1037 | $ 51.8500 |
| 2500+ | $0.0940 | $ 235.0000 |
| 5000+ | $0.0884 | $ 442.0000 |
