| Hersteller | |
| Hersteller-Teilenummer | SE30P12D |
| EBEE-Teilenummer | E8238703 |
| Gehäuse | DFN-8(3x3) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | None |
| Beschreibung | 30V 12A 2W 11.5mΩ@10V 1.5V@250uA 1 Piece P-Channel DFN-8(3x3) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1678 | $ 0.8390 |
| 50+ | $0.1300 | $ 6.5000 |
| 150+ | $0.1139 | $ 17.0850 |
| 500+ | $0.0937 | $ 46.8500 |
| 2500+ | $0.0847 | $ 211.7500 |
| 5000+ | $0.0794 | $ 397.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | SINO-IC SE30P12D | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 25mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 745pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 2W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 5.27nF | |
| Gate Charge(Qg) | 100nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1678 | $ 0.8390 |
| 50+ | $0.1300 | $ 6.5000 |
| 150+ | $0.1139 | $ 17.0850 |
| 500+ | $0.0937 | $ 46.8500 |
| 2500+ | $0.0847 | $ 211.7500 |
| 5000+ | $0.0794 | $ 397.0000 |
