| Hersteller | |
| Hersteller-Teilenummer | SE2102E |
| EBEE-Teilenummer | E85116037 |
| Gehäuse | SOT-523 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | SOT-523 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0297 | $ 0.5940 |
| 200+ | $0.0233 | $ 4.6600 |
| 600+ | $0.0197 | $ 11.8200 |
| 3000+ | $0.0171 | $ 51.3000 |
| 9000+ | $0.0152 | $ 136.8000 |
| 21000+ | $0.0142 | $ 298.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | SINO-IC SE2102E | |
| RoHS | ||
| RDS(on) | 470mΩ@2.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 15pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 170mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Current - Continuous Drain(Id) | 600mA | |
| Ciss-Input Capacitance | 130pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0297 | $ 0.5940 |
| 200+ | $0.0233 | $ 4.6600 |
| 600+ | $0.0197 | $ 11.8200 |
| 3000+ | $0.0171 | $ 51.3000 |
| 9000+ | $0.0152 | $ 136.8000 |
| 21000+ | $0.0142 | $ 298.2000 |
