| Hersteller | |
| Hersteller-Teilenummer | SE1003 |
| EBEE-Teilenummer | E8729820 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 100V 3A 230mΩ@10V,1A 1.5W 1.8V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0771 | $ 0.3855 |
| 50+ | $0.0612 | $ 3.0600 |
| 150+ | $0.0532 | $ 7.9800 |
| 500+ | $0.0472 | $ 23.6000 |
| 3000+ | $0.0414 | $ 124.2000 |
| 6000+ | $0.0391 | $ 234.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | SINO-IC SE1003 | |
| RoHS | ||
| RDS(on) | 230mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 20pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.5W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 650pF | |
| Gate Charge(Qg) | 20nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0771 | $ 0.3855 |
| 50+ | $0.0612 | $ 3.0600 |
| 150+ | $0.0532 | $ 7.9800 |
| 500+ | $0.0472 | $ 23.6000 |
| 3000+ | $0.0414 | $ 124.2000 |
| 6000+ | $0.0391 | $ 234.6000 |
