| Hersteller | |
| Hersteller-Teilenummer | TDNM3K50DWX |
| EBEE-Teilenummer | E85364048 |
| Gehäuse | SOT-363 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 50V 500mV 2 N-Channel SOT-363 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0780 | $ 0.3900 |
| 50+ | $0.0617 | $ 3.0850 |
| 150+ | $0.0535 | $ 8.0250 |
| 500+ | $0.0474 | $ 23.7000 |
| 3000+ | $0.0425 | $ 127.5000 |
| 6000+ | $0.0400 | $ 240.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Shenzhen JingYang TDNM3K50DWX | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 4Ω@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 13pF | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 150mW | |
| Drain to Source Voltage | 50V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 200mA | |
| Ciss-Input Capacitance | 33pF | |
| Output Capacitance(Coss) | 25pF | |
| Gate Charge(Qg) | 4.7nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0780 | $ 0.3900 |
| 50+ | $0.0617 | $ 3.0850 |
| 150+ | $0.0535 | $ 8.0250 |
| 500+ | $0.0474 | $ 23.7000 |
| 3000+ | $0.0425 | $ 127.5000 |
| 6000+ | $0.0400 | $ 240.0000 |
