| Hersteller | |
| Hersteller-Teilenummer | 3407/H |
| EBEE-Teilenummer | E82932006 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 4A 39mΩ@10V,4A 1.36W 1.5V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0392 | $ 0.3920 |
| 100+ | $0.0311 | $ 3.1100 |
| 300+ | $0.0270 | $ 8.1000 |
| 3000+ | $0.0240 | $ 72.0000 |
| 6000+ | $0.0215 | $ 129.0000 |
| 9000+ | $0.0203 | $ 182.7000 |
| 21000+ | $0.0201 | $ 422.1000 |
| 39000+ | $0.0199 | $ 776.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Shenzhen Fuman Elec 3407/H | |
| RoHS | ||
| RDS(on) | 48mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 66pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.36W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 522pF | |
| Gate Charge(Qg) | 6.1nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0392 | $ 0.3920 |
| 100+ | $0.0311 | $ 3.1100 |
| 300+ | $0.0270 | $ 8.1000 |
| 3000+ | $0.0240 | $ 72.0000 |
| 6000+ | $0.0215 | $ 129.0000 |
| 9000+ | $0.0203 | $ 182.7000 |
| 21000+ | $0.0201 | $ 422.1000 |
| 39000+ | $0.0199 | $ 776.1000 |
