| Hersteller | |
| Hersteller-Teilenummer | NM8205E |
| EBEE-Teilenummer | E85156805 |
| Gehäuse | ESOT-26 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| Beschreibung | 20V 5A 1.5W 26mΩ@4.5V,4.0A 1.1V@250uA 2 N-Channel ESOT-26 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0401 | $ 0.4010 |
| 100+ | $0.0316 | $ 3.1600 |
| 300+ | $0.0273 | $ 8.1900 |
| 3000+ | $0.0230 | $ 69.0000 |
| 6000+ | $0.0204 | $ 122.4000 |
| 9000+ | $0.0192 | $ 172.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Shandong Jingdao Microelectronics NM8205E | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 26mΩ@4.5V | |
| Betriebstemperatur - | -50℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 125pF | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 1.5W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 800pF | |
| Output Capacitance(Coss) | 155pF | |
| Gate Charge(Qg) | 11nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0401 | $ 0.4010 |
| 100+ | $0.0316 | $ 3.1600 |
| 300+ | $0.0273 | $ 8.1900 |
| 3000+ | $0.0230 | $ 69.0000 |
| 6000+ | $0.0204 | $ 122.4000 |
| 9000+ | $0.0192 | $ 172.8000 |
