| Hersteller | |
| Hersteller-Teilenummer | NM8205 |
| EBEE-Teilenummer | E85156806 |
| Gehäuse | SOT-26 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| Beschreibung | 20V 5A 1.5W 26mΩ@4.5V,4.0A 450mV@250uA 2 N-Channel SOT-26 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0281 | $ 0.5620 |
| 200+ | $0.0221 | $ 4.4200 |
| 600+ | $0.0188 | $ 11.2800 |
| 3000+ | $0.0168 | $ 50.4000 |
| 9000+ | $0.0151 | $ 135.9000 |
| 21000+ | $0.0141 | $ 296.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Shandong Jingdao Microelectronics NM8205 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 26mΩ@4.5V | |
| Betriebstemperatur - | -50℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 125pF | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 1.5W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 800pF | |
| Output Capacitance(Coss) | 155pF | |
| Gate Charge(Qg) | 11nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0281 | $ 0.5620 |
| 200+ | $0.0221 | $ 4.4200 |
| 600+ | $0.0188 | $ 11.2800 |
| 3000+ | $0.0168 | $ 50.4000 |
| 9000+ | $0.0151 | $ 135.9000 |
| 21000+ | $0.0141 | $ 296.1000 |
