| Hersteller | |
| Hersteller-Teilenummer | NM3400 |
| EBEE-Teilenummer | E85155290 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 5.8A 1.2W 55mΩ@2.5V,3A 600mV@250uA SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0373 | $ 0.7460 |
| 200+ | $0.0294 | $ 5.8800 |
| 600+ | $0.0250 | $ 15.0000 |
| 3000+ | $0.0215 | $ 64.5000 |
| 9000+ | $0.0192 | $ 172.8000 |
| 21000+ | $0.0180 | $ 378.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Shandong Jingdao Microelectronics NM3400 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 55mΩ@2.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 71pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.2W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 600mV | |
| Current - Continuous Drain(Id) | 5.8A | |
| Ciss-Input Capacitance | 630pF | |
| Gate Charge(Qg) | 17.5nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0373 | $ 0.7460 |
| 200+ | $0.0294 | $ 5.8800 |
| 600+ | $0.0250 | $ 15.0000 |
| 3000+ | $0.0215 | $ 64.5000 |
| 9000+ | $0.0192 | $ 172.8000 |
| 21000+ | $0.0180 | $ 378.0000 |
