| Hersteller | |
| Hersteller-Teilenummer | F5N65 |
| EBEE-Teilenummer | E85157088 |
| Gehäuse | ITO-220ABW |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 650V 5A 43W 2.1Ω@10V,2.5A 4V@250uA ITO-220ABW MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2126 | $ 1.0630 |
| 50+ | $0.1618 | $ 8.0900 |
| 150+ | $0.1424 | $ 21.3600 |
| 500+ | $0.1181 | $ 59.0500 |
| 2500+ | $0.1073 | $ 268.2500 |
| 5000+ | $0.1009 | $ 504.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Shandong Jingdao Microelectronics F5N65 | |
| RoHS | ||
| RDS(on) | 2.1Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 13pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 43W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 870pF | |
| Gate Charge(Qg) | 14nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2126 | $ 1.0630 |
| 50+ | $0.1618 | $ 8.0900 |
| 150+ | $0.1424 | $ 21.3600 |
| 500+ | $0.1181 | $ 59.0500 |
| 2500+ | $0.1073 | $ 268.2500 |
| 5000+ | $0.1009 | $ 504.5000 |
