| Hersteller | |
| Hersteller-Teilenummer | PJM4602DNSG-S |
| EBEE-Teilenummer | E82944132 |
| Gehäuse | SOT-23-6 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| Beschreibung | 20V 2A 60mΩ@4.5V,2A 1W 1.2V@250uA 2 N-Channel SOT-23-6 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0639 | $ 0.6390 |
| 100+ | $0.0512 | $ 5.1200 |
| 300+ | $0.0449 | $ 13.4700 |
| 3000+ | $0.0343 | $ 102.9000 |
| 6000+ | $0.0305 | $ 183.0000 |
| 9000+ | $0.0286 | $ 257.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | PJSEMI PJM4602DNSG-S | |
| RoHS | ||
| RDS(on) | 80mΩ@2.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 27pF | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 1W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 260pF | |
| Gate Charge(Qg) | 5nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0639 | $ 0.6390 |
| 100+ | $0.0512 | $ 5.1200 |
| 300+ | $0.0449 | $ 13.4700 |
| 3000+ | $0.0343 | $ 102.9000 |
| 6000+ | $0.0305 | $ 183.0000 |
| 9000+ | $0.0286 | $ 257.4000 |
