| Hersteller | |
| Hersteller-Teilenummer | PJM10H01PSA |
| EBEE-Teilenummer | E82838029 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| Beschreibung | 100V 1A 650mΩ@10V,1A 500mW 2.5V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0680 | $ 1.3600 |
| 200+ | $0.0541 | $ 10.8200 |
| 600+ | $0.0472 | $ 28.3200 |
| 3000+ | $0.0387 | $ 116.1000 |
| 9000+ | $0.0345 | $ 310.5000 |
| 21000+ | $0.0324 | $ 680.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | PJSEMI PJM10H01PSA | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 650mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | - | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 500mW | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 1A | |
| Ciss-Input Capacitance | - | |
| Gate Charge(Qg) | 4nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0680 | $ 1.3600 |
| 200+ | $0.0541 | $ 10.8200 |
| 600+ | $0.0472 | $ 28.3200 |
| 3000+ | $0.0387 | $ 116.1000 |
| 9000+ | $0.0345 | $ 310.5000 |
| 21000+ | $0.0324 | $ 680.4000 |
