5% off
| Hersteller | |
| Hersteller-Teilenummer | SI2305 |
| EBEE-Teilenummer | E85278888 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 20V 4.1A 1.25W 75mΩ@2.5V,3A 1V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0332 | $ 0.6640 |
| 200+ | $0.0262 | $ 5.2400 |
| 600+ | $0.0228 | $ 13.6800 |
| 3000+ | $0.0201 | $ 60.3000 |
| 9000+ | $0.0181 | $ 162.9000 |
| 21000+ | $0.0170 | $ 357.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | PAKER SI2305 | |
| RoHS | ||
| RDS(on) | 75mΩ@2.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 87pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.25W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 4.1A | |
| Ciss-Input Capacitance | 415pF | |
| Gate Charge(Qg) | 10nC@6V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0332 | $ 0.6640 |
| 200+ | $0.0262 | $ 5.2400 |
| 600+ | $0.0228 | $ 13.6800 |
| 3000+ | $0.0201 | $ 60.3000 |
| 9000+ | $0.0181 | $ 162.9000 |
| 21000+ | $0.0170 | $ 357.0000 |
